The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. II. Numerical simulation and verification
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1498967
Reference22 articles.
1. Ferroelectric Memories
2. Fatigue-free ferroelectric capacitors with platinum electrodes
3. The interface screening model as origin of imprint in PbZrxTi1−xO3 thin films. I. Dopant, illumination, and bias dependence
4. Electronic Conduction Characteristics of Sol-Gel Ferroelectric $\bf Pb(Zr_{0.4}Ti_{0.6})O_{3}$ Thin-Film Capacitors: Part I
5. Electronic Conduction Characteristics of Sel-Gel Ferroelectric $\bf Pb(Zr_{0.4}Ti_{0.6})O_{3}$ Thin-Film Capacitors: Part II
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