Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3457349
Reference20 articles.
1. InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
2. 40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
4. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
5. Surface-plasmon-enhanced light emitters based on InGaN quantum wells
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