Resonant Raman scattering study of InSb etched by reactive ion beam etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362472
Reference13 articles.
1. Chlorine reactive ion beam etching of InSb and InAs0.15Sb0.85/InSb strained‐layer superlattices
2. Hydrogen Iodide‐Based Dry Etching of GaAs , InP , and Related Compounds
3. Dry etching of III–V semiconductors in CH3I, C2H5I, and C3H7I discharges
4. Reactive Ion Etching of InAs , InSb , and GaSb in CCl2 F 2 / O 2 and C 2 H 6 / H 2
5. Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature
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1. InSb Czochralski Growth Single Crystals for InGaSb Substrates;MRS Proceedings;2014
2. Raman Spectroscopy of the Damages Induced by Ar-Ion Beam Etching of InSb(100) Surface;ECS Solid State Letters;2013-12-27
3. Optical and transport properties of InSb thin films grown on GaAs by metalorganic chemical vapor deposition;Thin Solid Films;2006-03
4. Far-infrared absorption and Raman scattering studies in MeV C+- and C2+-implanted InSb(111) crystals;Physica B: Condensed Matter;2000-09
5. Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching;Defect and Diffusion Forum;2000-08
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