Raman Spectroscopy of the Damages Induced by Ar-Ion Beam Etching of InSb(100) Surface-Reference-Cited by-同舟云学术

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Raman Spectroscopy of the Damages Induced by Ar-Ion Beam Etching of InSb(100) Surface

Published:2013-12-27 Issue:3 Volume:3 Page:P27-P29
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Seok C.,Choi M.,Park S.,Jung J.,Park Y.,Yang I.-S.,Yoon E.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces;Review of Scientific Instruments;2023-12-01

2. Variable range hopping conductivity in molecular beam epitaxial InSb;Journal of Physics D: Applied Physics;2022-09-28

3. InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates;IEEE Transactions on Electron Devices;2016-08

4. Development of InSb dry etch for mid-IR applications;Microelectronic Engineering;2016-03

5. 60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb;Journal of Applied Physics;2014-10-14

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