Thermal expansion of the hexagonal (4H) polytype of SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337456
Reference9 articles.
1. The quantitative calculation of SiC polytypes from measurements of X-ray diffraction peak intensities
2. Effect of Stress on the Expansion Coefficient
3. High Temperature, High Vacuum, Diffractometer Attachment
4. Thermal Expansion of Various Ceramic Materials to 1500oC
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4. Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM;Microelectronics Reliability;2023-11
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