Thermodynamic modelling of fast dopant diffusion in Si-Reference-Cited by-同舟云学术

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Thermodynamic modelling of fast dopant diffusion in Si

Published:2018-04-28 Issue:16 Volume:123 Page:161527
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Saltas V.¹,Chroneos A.²³,Vallianatos F.¹

Affiliation:

1. School of Applied Sciences, Technological Educational Institute of Crete, Chania, Greece

2. Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom

3. Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB, United Kingdom

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001755

Reference60 articles.

1. Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies

2. Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

3. Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

4. Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

5. Experimental evidence of staggered oxygen dimers as a component of boron-oxygen complexes in silicon

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1. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping;Surface Engineering and Applied Electrochemistry;2023-12

2. Method for estimating elastic modulus of doped semiconductors by using ab initio calculations—Doping effect on Young’s modulus of silicon crystal;AIP Advances;2023-08-01

3. Parameters of the vacancy formation and self-diffusion in the iron;Journal of Physics and Chemistry of Solids;2023-01

4. Applying the cBΩ thermodynamical model to LiF using its equation of state obtained from high pressure diamond anvil cell measurements;Solid State Ionics;2020-10

5. Pressure effects on the diffusion of boron and phosphorus in silicon;International Journal of Modern Physics B;2019-09-20

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