The effect of an InP cap layer on the photoluminescence of an InxGa1–xAs1–yPy/InzAl1– zAs quantum well heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4985614
Reference27 articles.
1. A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 mu m
2. Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates
3. Diode Lasers and Photonic Integrated Circuits
4. InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy
5. Effects of localization on hot carriers in InAs/AlAsxSb1–xquantum wells
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