InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 mu m
2. Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
3. Electron effective mass and band‐gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP
4. Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP
5. Exciton Absorption and Emission in InP
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effect of an InP cap layer on the photoluminescence of an InxGa1–xAs1–yPy/InzAl1– zAs quantum well heterostructure;Journal of Applied Physics;2017-06-21
2. Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates;Japanese Journal of Applied Physics;2011-02-07
3. Absorption Change Induced by Electric Field of an InGaAsP/InAlAs/InP Asymmetric Quantum Well Structure Gown on InP Substrates;Japanese Journal of Applied Physics;2011-02-01
4. Structural dependence of optical bistability of In0.52Al0.48As/InP type II MQW diodes grown by gas source molecular beam epitaxy;Journal of Crystal Growth;1998-06
5. Bistability of electroluminescence in InAlAs/InP type II MQW diodes;Applied Surface Science;1997-06
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