Shell morphology and Raman spectra of epitaxial Ge−SixGe1−x and Si−SixGe1−x core-shell nanowires
Author:
Affiliation:
1. Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Bldg. 160, Austin, Texas 78758, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4985616
Reference47 articles.
1. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
2. Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor
3. Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor
4. Radial modulation doping in core–shell nanowires
5. Coaxial silicon nanowires as solar cells and nanoelectronic power sources
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