Transformation of divacancies to divacancy-oxygen pairs in p-type Czochralski-silicon; mechanism of divacancy diffusion
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862435
Reference24 articles.
1. Defect production and lifetime control in electron and γ‐irradiated silicon
2. Lifetime in proton irradiated silicon
3. EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes
4. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
5. Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon
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