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Characteristics of displacement defects in PNP transistors caused by heavy ion irradiation

  • Published:2020-03 Issue: Volume:467 Page:86-90
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yang Jianqun,Sun Xiangsong,Yu Xueqiang,Qin Zhaohui,Li Xingji

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT’s;Wei;IEEE Trans. Electron Devices,1995

2. Correlation between high dose rate irradiation and low dose rate irradiation for switched dose rate technique;Li;IEEE Trans. Nucl. Sci.,2019

3. Review of displacement damage effects in silicon devices;Srour;IEEE Trans. Nucl. Sci.,2003

4. Defect annealing in neutron and ion damaged silicon: Influence of defect clusters and doping;Fleming;J. Appl. Phys.,2010

5. Radiation effects on bipolar junction transistors induced by 25 MeV carbon ions;Liu;Nucl. Instr. Meth. A,2010

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