Investigation of the I–V characteristics of n+/n homojunctions introduced by heavy ion irradiation in CdZnTe crystals-Reference-Cited by-同舟云学术

Investigation of the I–V characteristics of n⁺/n homojunctions introduced by heavy ion irradiation in CdZnTe crystals

Published:2023 Issue:8 Volume:25 Page:1213-1219
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liang Lu¹²,Wang Aoqiu¹²,Wang Yingming¹²,Qin Zhentao¹²,Qin Chi¹²,Shang Rongjin¹²,Jiang Kai¹²,Cao Yuwei¹²,Xu Lingyan¹²^ORCID,Jie Wanqi¹²

Affiliation:

1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

2. Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China

Abstract

The current transport of CdZnTe crystals follows the Schottky emission model due to n+/n homojunctions introduced by heavy ion irradiation.

Funder

Natural Science Basic Research Program of Shaanxi Province

State Key Laboratory of Nuclear Physics and Technology, Peking University

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D2CE01449A

Reference46 articles.

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4. C.Claeys and E.Simoen , Radiation effects in advanced semiconductor materials and devices , Springer Science & Business Media , 2002

5. Characteristics of displacement defects in PNP transistors caused by heavy ion irradiation

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