Effects of P doping on photoluminescence of Si1−xGex alloy nanocrystals embedded in SiO2 matrices: Improvement and degradation of luminescence efficiency-Reference-Cited by-同舟云学术

Effects of P doping on photoluminescence of Si1−xGex alloy nanocrystals embedded in SiO2 matrices: Improvement and degradation of luminescence efficiency

Published:2001-11-15 Issue:10 Volume:90 Page:5147-5151
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Toshikiyo Kimiaki,Tokunaga Masakazu,Takeoka Shinji,Fujii Minoru,Hayashi Shinji,Moriwaki Kazuyuki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1413486

Reference20 articles.

1. Quantum size effects on photoluminescence in ultrafine Si particles

2. Size, shape, and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si

3. Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices

4. Size-dependent photoluminescence from surface-oxidized Si nanocrystals in a weak confinement regime

5. Luminescence of porous silicon in a weak confinement regime

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