Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation-Reference-Cited by-同舟云学术

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Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation

Published:2008-08 Issue:21-22 Volume:62 Page:3617-3619
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Dun Shaobo,Lu Tiecheng,Hu Youwen,Hu Qiang,You Caofeng,Huang Ningkang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Neutron transmutation doping in semiconductors: Science and applications

2. Annealing effects on electrical properties of thermal neutron transmutation doped Ge

3. Isotopically engineered semiconductors

4. Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism

5. The Electronic Structure of Semiconductor Nanocrystals

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping;Progress in Natural Science: Materials International;2014-06

2. Fabrication of uniform Ge-nanocrystals embedded in amorphous SiO2 films using Ge-ion implantation and neutron irradiation methods;Applied Physics Letters;2011-02-14

3. The structures and properties of Ge nanocrystals before and after Neutron transmutation doping;Acta Physica Sinica;2010

4. Neutron transmutation doping effect on the optical property of germanium nanocrystals;Scripta Materialia;2009-11

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