1. K. Lark-Horovitz, in Proceedings of the Conference on Semiconducting Materials, edited by H. K. Henish (Butterworth, London, 1951), p. 47; [Russian translation in Semiconducting Materials, edited by V. M. Tuchkevich (IL, Moscow, 1954), p. 62].
2. Neutron Transmutation Doping in Semiconductors, edited by J. Meese (Plenum Press, New York, 1979; Mir, Moscow, 1982); Semiconductor Doping in Nuclear Reactions [in Russian], edited by L. S. Smirnov (Nauka, Novosibirsk, 1981).
3. M. S. Schnoller, IEEE Trans. Electron Devices ED-21, 313 (1974).
4. I. N. Voronov, A. N. Erykalov, E. I. Ignatenko, M. L. Kozhukh, M. A. Lyutov, Yu. V. Petrov, V. M. Tuchkevich, and I. S. Shlimak, USSR Inventor’s Certificate 1063872 (1982).
5. H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).