Oxygen recoil implant from SiO2 layers into single-crystalline silicon-Reference-Cited by-同舟云学术

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Oxygen recoil implant from SiO2 layers into single-crystalline silicon

Published:2001-06 Issue:11 Volume:89 Page:5997-6001
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang G.,Chen Y.,Li D.,Oak S.,Srivastav G.,Banerjee S.,Tasch A.,Merrill P.,Bleiler R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1355699

Reference7 articles.

1. The concentration profiles of the recoil implanted oxygen in Si after ion implantations into SiO2-Si substrates

2. Recoil range distributions in multilayered targets

3. Ion beam mixing: Basic experiments

4. A relation between surface oxide and oxygen-defect complexes in solid-phase epitaxial Si regrown from ion-beam-amorphized Si layers

5. TRIM-DYNAMIC applied to marker broadening and SIMS depth profiling

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Spectrometry Update. Atomic mass spectrometry;Journal of Analytical Atomic Spectrometry;2002-07-11

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