Author:
Hirao T.,Inoue K.,Fuse G.,Takayanagi S.,Yaegashi Y.
Reference6 articles.
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2. MOS measurement of oxygen recoils from As implantation into silicon dioxide
3. Hirao, T., Inoue, K., Yaegashi, Y. and Takayanagi, S. to be published
4. Depth distribution of knock‐on nitrogen in Si by phosphorus implantation through Si3N4films
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