Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain-Reference-Cited by-同舟云学术

Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Published:2006-02-13 Issue:7 Volume:88 Page:072103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Masahara Meishoku,Liu Yongxun,Endo Kazuhiko,Matsukawa Takashi,Sakamoto Kunihiro,Ishii Kenichi,O’uchi Shinichi,Sugimata Etsuro,Yamauchi Hiromi,Suzuki Eiichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2173715

Reference17 articles.

1. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate

2. Vertical MOS transistors with 70 nm channel length

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties of atomic ribbons with spin-orbit couplings on different substrates;Journal of Applied Physics;2019-04-14

2. Quasi one-dimensional lead ribbons on the Si(110) surface;Applied Surface Science;2016-06

3. Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal–oxide–silicon fin field-effect transistors;Japanese Journal of Applied Physics;2015-03-05

4. Preferential adsorption of C60molecules to step edges of the Si(110)-16 × 2 single domain surface;Journal of Physics: Conference Series;2013-03-01

5. One-Dimensional Nanotemplate Structure of a Si(110) Substrate;e-Journal of Surface Science and Nanotechnology;2012