Preferential adsorption of C60molecules to step edges of the Si(110)-16 × 2 single domain surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/417/i=1/a=012036/pdf
Reference16 articles.
1. Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain
2. Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
3. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
4. Surface Reconstruction on a Clean Si(110) Surface Observed by RHEED
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