The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340434
Reference14 articles.
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4. Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
5. Role of experimental resolution in measurements of critical layer thickness for strained‐layer epitaxy
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