Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures
Author:
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/8/1.4929720.pdf?itemId=/content/aip/journal/adva/5/8/10.1063/1.4929720&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference22 articles.
1. Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation
2. Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface
3. Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors
4. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices
5. Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors
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