Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4759354
Reference46 articles.
1. Silicon Carbide
2. Sic Materials and Devices
3. Nanoscale transport properties at silicon carbide interfaces
4. Intrinsic SiC/SiO2 Interface States
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