SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs
Author:
Affiliation:
1. CNR-IMM,Catania,Italy,95121
2. STMicroelectronics,Catania,Italy,95121
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764490.pdf?arnumber=9764490
Reference13 articles.
1. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements
2. Shallow electron traps at the 4H–SiC/SiO2 interface
3. Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations
4. Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis
5. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation;IEEE Transactions on Device and Materials Reliability;2023-03
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