Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99633
Reference14 articles.
1. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
2. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
3. Effect ofinsituandexsituannealing on dislocations in GaAs on Si substrates
4. Stability of 300 K continuous operation ofp‐nAlxGa1−xAs‐GaAs quantum well lasers grown on Si
5. Crystal orientations and defect structures of GaAs layers grown on misoriented Si substrates by molecular-beam epitaxy
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