Low threading dislocation density GaAs growth on on-axis GaP/Si (001)-Reference-Cited by-同舟云学术

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Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Published:2017-12-14 Issue:22 Volume:122 Page:225703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jung Daehwan¹,Callahan Patrick G.²,Shin Bongki¹,Mukherjee Kunal²,Gossard Arthur C.¹²³,Bowers John E.¹²³

Affiliation:

1. Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

2. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

3. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

Funder

NSF | MPS | Division of Materials Research

DOE | Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5001360

Reference45 articles.

1. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

2. Optical properties of GaAs on (100) Si using molecular beam epitaxy

3. Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition

4. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

5. Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon‐on‐insulator

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1. Toward thin GaSb Buffer Layers Grown on On‐Axis (001) Silicon by Molecular Beam Epitaxy;Advanced Physics Research;2024-08-22

2. Impacts of Dislocations and Residual Thermal Tension on Monolithically Integrated InGaP/GaAs/Si Triple‐Junction Solar Cells;Solar RRL;2024-08-20

3. Progressing in III-V Semiconductor Quantum Dot Lasers Grown Directly on Silicon: A Review;Silicon;2024-07-24

4. Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si;IEEE Journal of Photovoltaics;2024-07

5. Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate;ACS Applied Materials & Interfaces;2024-06-03

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