Impact of temperature-dependent series resistance on the operation of AlGaN/GaN high electron mobility transistors
Author:
Affiliation:
1. Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju-gun, Joellabuk-do 55324, South Korea
2. Convergence Technology Division, Korea Advanced Nano Fab Center, 16229 Suwon, South Korea
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Korea Semiconductor Research Consortium
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0064823
Reference26 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability
3. AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
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