Electrical properties of the Ti(SiGe)2/Si0.89Ge0.11/Si(001) contact system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365972
Reference32 articles.
1. Prospects of SiGe heterodevices
2. Si/Si1−xGex multiquantum wells: A route to infrared detectors
3. Silicides for integrated circuits: TiSi2 CoSi2
4. Electrical and microstructural characteristics of Ti contacts on (001)Si
5. Solid state reaction of Co,Ti with epitaxially‐grown Si1−xGexfilm on Si(100) substrate
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process;Japanese Journal of Applied Physics;2006-04-25
2. Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
3. Study of electrical and interfacial properties of CVD-W/p-Si0.83Ge0.17/Si(001);Thin Solid Films;2000-12
4. Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES;Microchimica Acta;2000-04
5. Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers;Journal of Applied Physics;1999-12-15
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