Solid state reaction of Co,Ti with epitaxially‐grown Si1−xGexfilm on Si(100) substrate-Reference-Cited by-同舟云学术

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Solid state reaction of Co,Ti with epitaxially‐grown Si1−xGexfilm on Si(100) substrate

Published:1995-02 Issue:3 Volume:77 Page:1086-1092
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Qi Wen‐Jie,Li Bing‐Zong,Huang Wei‐Ning,Gu Zhi‐Guang,Lu Hong‐Qiang,Zhang Xiang‐Jiu,Zhang Ming,Dong Guo‐Sheng,Miller David C.,Aitken Robert G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.358969

Reference18 articles.

1. SiGe heterojunctions: devices and applications

2. Thermal reaction between Pt thin films and SixGe1−xalloys

3. Some titanium germanium and silicon compounds: Reaction and properties

4. Compound formation at the interaction of Pd with strained layers of Si1−xGexepitaxially grown on Si(100)

5. Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1−xGexalloys

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3. Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer;Thin Solid Films;2010-10

4. Electronic structure of Co (Si, Ge) compounds: Ab-initio calculation;Physica B: Condensed Matter;2008-10

5. Silicides;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09

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