Evidence of dangling bond electrical activity at the Ge/oxide interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3050451
Reference23 articles.
1. High-k/Ge MOSFETs for future nanoelectronics
2. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
3. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
4. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
5. Dangling-bond defects and hydrogen passivation in germanium
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