A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si-Reference-Cited by-同舟云学术

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A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si

Published:2012-12-15 Issue:12 Volume:112 Page:124912
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Renyu,Wagner Hannes,Dastgheib-Shirazi Amir,Kessler Michael,Zhu Zihua,Shutthanandan Vaithiyalingam,Altermatt Pietro P.,Dunham Scott T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4771672

Reference12 articles.

1. Kinetics of Phosphorus Predeposition in Silicon Using POCl3

2. General Relationship for the Thermal Oxidation of Silicon

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4. Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation;Japanese Journal of Applied Physics;2018-11-19

5. N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass;Thin Solid Films;2018-09

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