Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96067
Reference12 articles.
1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
2. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
3. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion
4. Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices
5. EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. EFFECTS OF DEFECTS ON IMPURITY-INDUCED DISORDERING OF AlGaAs-GaAs SUPERLATTICES;Defect Control in Semiconductors;1990
2. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures;Journal of Applied Physics;1988-12-15
3. Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices;Applied Physics Letters;1988-05-02
4. Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−xbarriers;Applied Physics Letters;1986-03-24
5. Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices;Superlattices and Microstructures;1986-01
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