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Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices

  • Published:1986-01 Issue:4 Volume:2 Page:303-307
  • ISSN:0749-6036
  • Container-title:Superlattices and Microstructures
  • language:en
  • Short-container-title:Superlattices and Microstructures

Author:

Nakashima Hisao,Kobayashi Junji,Fukunaga Toshiaki,Matsui Kazunori,Ishida Kohji,Nakajima Masato,Bamba Yasuo,Ishida Koichi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion mixing of III‐V compound semiconductor layered structures;Journal of Applied Physics;1992-03-15

2. Ion mixing of semiconductor superlattices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07

3. Compositional disordering by solid phase regrowth;Applied Physics Letters;1991-02-11

4. Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces;Applied Surface Science;1990-01

5. EFFECTS OF DEFECTS ON IMPURITY-INDUCED DISORDERING OF AlGaAs-GaAs SUPERLATTICES;Defect Control in Semiconductors;1990
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