Compositional disordering by solid phase regrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104549
Reference18 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
2. Disorder of an AlAs‐GaAs superlattice by impurity diffusion
3. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity
4. Impurity diffusion enhancement of interdiffusion in an InGaPAs‐GaAs heterostructure
5. Impurity‐induced layer disordering in In0.5(AlxGa1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers
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1. Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique;Acta Physica Polonica A;2009-05
2. Shallow Si/Pd‐based ohmic contacts ton‐Al0.5In0.5P;Journal of Applied Physics;1996-04
3. Compositional disordering of Al0.3Ga0.7As/GaAs superlattices by solid phase regrowth;Physica Status Solidi (a);1996-02-16
4. Composition control and growth mechanisms in solid phase epitaxy of GeSi in GexSi1−x/Pd2Si/Si systems;Thin Solid Films;1993-02
5. The Development of Solid Phase Regrowth on GaAs and its applications;MRS Proceedings;1993
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