Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices-Reference-Cited by-同舟云学术

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Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices

Published:1985-07 Issue:1 Volume:58 Page:101-107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kaliski R. W.,Gavrilovic P.,Meehan K.,Gavrilovic J.,Hsieh K. C.,Jackson G. S.,Holonyak N.,Coleman J. J.,Burnham R. D.,Thornton R. L.,Paoli T. L.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.335710

Reference18 articles.

1. Disorder of an AlAs‐GaAs superlattice by impurity diffusion

2. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

3. Thermal‐anneal wavelength modification of multiple‐wellp‐nAlxGa1−xAs‐GaAs quantum‐well lasers

4. Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion

5. Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

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4. 40GHz integrated multi quantum well intermixed waveguide photodiodes;16th International Workshop on Physics of Semiconductor Devices;2012-10-15

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