Spectroscopic ellipsometry study of InP, GaInAs, and GaInAs/InP heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336383
Reference20 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy
3. New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
4. Stimulated emission in strained‐layer quantum‐well heterostructures
5. Structure of GaAs-Ga1−xAlxAs superlattices grown by metal-organic chemical vapour deposition
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