New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19820009?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Superlattice avalanche photodiodes for optical communications;Optical and Quantum Electronics;1998
2. Analysis of the influence of dark current on the performance of optical receivers employing superlattice APDs;IEE Proceedings J Optoelectronics;1988
3. New Graded Band GAP and Superlattice Structures and their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices;The Physics of Submicron Semiconductor Devices;1988
4. Optical fiber telecommunications;Hyperfine Interactions;1987-12
5. A potentially low-noise avalanche diode microwave amplifier;IEEE Transactions on Electron Devices;1987-05
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