Large lattice relaxation deep levels in neutron-irradiated GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2126123
Reference46 articles.
1. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates
2. Semiconductor ultraviolet detectors
3. Schottky barrier detectors on GaN for visible–blind ultraviolet detection
4. GaN Electronics for High Power, High Temperature Applications
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2. Significant Degradation of AlGaN/GaN High-Electron Mobility Transistors With Fast and Thermal Neutron Irradiation;IEEE Transactions on Nuclear Science;2019-06
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