Author:
Pearton S. J.,Ren F.,Zhang A. P.,Dang G.,Cao X. A.,Cho H.,Abernathy C. R.,Han J.,Baca A. G.,Monier C.,Chang P.,Shul R J.,Zhang L.,Van Hove J. M.,Chow P. P.,Klaassen J. J.,Polley C. J.,Wowchack A. M.,King D. J.,Chu S. N. G.,Hong M.,Polyakov A. Y.,Smirnov N. B.,Govorkov A. V.,Chyi J.-I.,Lee C.-M.,Nee T.-E.,Chuo C.-C.,Chi G. C.
Abstract
The commercialization of blue, green, and white GaN-based light-emitting diodes and violet laser diodes has created tremendous interest both from an applications viewpoint and for the basic science of the AlGaInN materials system. The fact that extremely efficient light emission can be achieved in heteroepitaxial layers of these materials grown on lattice mismatched substrates such as sapphire is counter to the experience of almost 40 years of semiconductor light source technology.
Publisher
The Electrochemical Society
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献