Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339096
Reference19 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
3. The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy
4. A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy
5. Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy
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1. Photoluminescence properties of δ-doped barrier layers in modulation-doped InAlAs/InGaAs field-effect transistor structures;Journal of Applied Physics;2001
2. Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures;Journal of Applied Physics;2000-08
3. Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence;Journal of Applied Physics;1999-10-15
4. Nondestructive Analysis of Current Gain of InP/InGaAs Heterojunction Bipolar Transistor Structures using Photoreflectance Spectroscopy;MRS Proceedings;1999
5. A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure;Technical Physics;1997-12
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