Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence-Reference-Cited by-同舟云学术

Nondestructive evaluation of channel carrier concentration in modulation-doped InAlAs/InGaAs field-effect transistor structures by room-temperature photoluminescence

Published:1999-10-15 Issue:8 Volume:86 Page:4333-4340
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Watanabe Kazuo,Yokoyama Haruki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.371366

Reference14 articles.

1. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors

2. W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/

3. 0.05-µm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

4. High-speed and large noise margin tolerance E/D logic gates with LDD structure DMTs fabricated using selective RIE technology

5. Room-temperature photoreflectance characterization of pseudomorphic GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the two-dimensional electron gas density

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-03

2. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well;Semiconductors;2015-02

3. Photoluminescence studies of In0.7Al0.3As/In0.75Ga0.25As/In0.7Al0.3As metamorphic heterostructures on GaAs substrates;Semiconductors;2014-05

4. Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures;Solid-State Electronics;2007-01

5. Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers;Japanese Journal of Applied Physics;2005-06-10