Be+/O+‐ion implantation in GaAs–AlGaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337337
Reference13 articles.
1. Semi‐insulating layers of GaAs by oxygen implantation
2. Carrier removal profiles from oxygen implanted GaAs
3. Selective carrier removal using oxygen implantation in GaAs
4. Isolation characteristics in selectively O+ and Cr+ implanted GaAs
5. GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers
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2. Rapid isothermal processing for fabrication of GaAs-based electronic devices (HBTs);IEEE Transactions on Electron Devices;1992
3. Effects of Mechanical Ventilation and Cardiac Output upon Perfusion in Hypoxic Lung Areas;New Aspects on Respiratory Failure;1992
4. Characteristics of Be+and O+or H+co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures;Journal of Applied Physics;1991-01-15
5. Ion implantation for isolation of III-V semiconductors;Materials Science Reports;1990-01
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