Carrier removal profiles from oxygen implanted GaAs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19780208?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Favennec, P.N., and Rao, E.V.K.: ‘Compensating layers in GaAs by ion implantation: application to integrated optics’, Namba, S., Ion implantation in semiconductors, (Plenum Press, New York 1975), p. 65–71
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1. Improvement of RF performance of GaAs/Si MESFETs using buried oxygen implantation;IEEE Transactions on Electron Devices;1996-05
2. Total internal reflection optical switch with injection region isolated by oxygen ion implantation;Fiber and Integrated Optics;1996-01
3. Electrical and optical properties of oxygen‐ion hot‐implanted GaAs layers;Applied Physics Letters;1994-05-09
4. A novel high-voltage high-speed MESFET using a standard GaAs digital IC process;IEEE Transactions on Electron Devices;1994
5. Oxygen ion implantation into both heavily doped n+- and p+-GaAs for isolation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-07
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