Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization-Reference-Cited by-同舟云学术

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Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

Published:2012-08-13 Issue:7 Volume:101 Page:072106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Toko K.¹,Kurosawa M.²,Saitoh N.³,Yoshizawa N.³,Usami N.⁴,Miyao M.²,Suemasu T.¹

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Department of Electronics, Kyushu University, Motooka, Fukuoka 819-0395, Japan

3. Electron Microscope Facility, IBEC Innovation Platform, AIST, 16-1 Onogawa, Tsukuba 305-8569, Japan

4. Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference22 articles.

1. Low-temperature formation (<500°C) of poly-Ge thin-film transistor with NiGe Schottky source/drain

2. Low-temperature growth of polycrystalline Ge thin film on glass by in situ deposition and ex situ solid-phase crystallization for photovoltaic applications

3. High-performance Ge-on-Si photodetectors

4. High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

5. Doping and Raman Characterization of Boron and Phosphorus Atoms in Germanium Nanowires

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1. Low-temperature growth of narrow optical gap highly conducting nc-Ge thin films with superior crystallinity involving dominant <111> orientation;Solar Energy Materials and Solar Cells;2024-08

2. Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review;Advanced Electronic Materials;2024-05

3. Effect of template on the photoresponsivity of BaSi2 films grown on Ge(111) substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2024-03-27

4. The microstructure and electrical and optical properties of Ge–Cu–Te phase-change thin films;CrystEngComm;2024

5. Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C;Crystal Growth & Design;2023-12-04

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