The microstructure and electrical and optical properties of Ge–Cu–Te phase-change thin films
Author:
Affiliation:
1. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Abstract
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2024/CE/D3CE01067H
Reference64 articles.
1. Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices
2. Storage-class memory: The next storage system technology
3. Design strategy of phase change material properties for low-energy memory application
4. Application of Ge2Sb2Te5 phase change films in flexible memory devices
5. Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films
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