Application of Ge2Sb2Te5 phase change films in flexible memory devices
Author:
Affiliation:
1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China
2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
Abstract
Funder
National Natural Science Foundation of China
State Key Laboratory of Silicon Materials
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/CE/D2CE00616B
Reference32 articles.
1. Bending Fatigue Study of Sputtered ITO on Flexible Substrate
2. Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate
3. Flexible Single-Component-Polymer Resistive Memory for Ultrafast and Highly Compatible Nonvolatile Memory Applications
4. Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95Co0.05O3Film
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