Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films-Reference-Cited by-同舟云学术

Simultaneously higher thermal stability and lower resistance drifting for Sb/In_48.9Sb_15.5Te_35.6 nanocomposite multilayer films

Published:2022 Issue:8 Volume:24 Page:1638-1644
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Gao Shiwei¹,Hu Yifeng¹^ORCID

Affiliation:

1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000, China

Abstract

In this study, In48.9Sb15.5Te35.6 (IST) was introduced as a stable interlayer to improve the weak amorphous thermal stability and large resistance drift of Sb films.

Funder

National Natural Science Foundation of China

Institute of Semiconductors, Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01556G

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4. Effect of indium doping on the properties of GeSb phase-change alloy

5. Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory

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