Electromigration in isolated aluminum vias probed by resistance changes and 1/fnoise
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362417
Reference36 articles.
1. Study of electromigration‐induced resistance and resistance decay in Al thin‐film conductors
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3. Activation energy in the early stage of electromigration in Al-1% Si/TiN/Ti bamboo lines
4. 1fNoise and Grain-Boundary Diffusion in Aluminum and Aluminum Alloys
5. Activation energies associated with current noise of thin metal films
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1. Study of conductance fluctuations (1/f alpha noise) in metallic nanowires;SPIE Proceedings;2004-05-25
2. Onset of long-range diffusion and exponent of 1/fα noise in metal films with electromigration damage;Applied Physics Letters;2002-12-30
3. Measurement of 1/f noise and its application in materials science;Current Opinion in Solid State and Materials Science;2002-02
4. Combined low-frequency noise and resistance measurements for void extraction in deep-submicrometer interconnects;Journal of Electronic Materials;2001-12
5. Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurements;SPIE Proceedings;2000-10-23
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