Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films-Reference-Cited by-同舟云学术

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Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

Published:2015-09-07 Issue:9 Volume:118 Page:094506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharma Yogesh¹^ORCID,Pavunny Shojan P.¹^ORCID,Fachini Esteban²,Scott James F.³,Katiyar Ram S.¹

Affiliation:

1. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00936-8377, USA

2. General Studies College, University of Puerto Rico, San Juan, Puerto Rico 00931, USA

3. Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB0 3HE, United Kingdom

Funder

NSF

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930039

Reference38 articles.

1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

2. Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

3. Emerging memories: resistive switching mechanisms and current status

4. Nanoionics-based resistive switching memories

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2. Understanding the coexistence of two bipolar resistive switching modes with opposite polarity in CuxO (1 ≤ x ≤ 2)-based two-terminal devices;Journal of Materials Science: Materials in Electronics;2022-01-10

3. Preparation and Properties of Resistive Random Access Memory Based on Tin Disulfide Nanosheets;CHINESE J INORG CHEM;2021

4. A comprehensive review on emerging artificial neuromorphic devices;Applied Physics Reviews;2020-03

5. Oxygen-assisted synthesis of hBN films for resistive random access memories;Applied Physics Letters;2019-08-12

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