Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance
Author:
Funder
DOE
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4858967
Reference26 articles.
1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
2. Molecular beam epitaxy growth of GaAs1−xBix
3. Band gap of GaAs1−xBix, 0
4. Giant Spin-Orbit Bowing inGaAs1−xBix
5. GaBiAs: A material for optoelectronic terahertz devices
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