Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures-Reference-Cited by-同舟云学术

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Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

Published:2015-05 Issue:5 Volume:5 Page:057129
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yin Yao¹²^ORCID,Sun Huabin¹,Sang Liwen²,Chen Peng¹,Zheng Youdou¹³,Dierre Benjamin²,Sumiya Masatomo²,Shi Yi¹³,Sekiguchi Takashi²

Affiliation:

1. National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

2. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

3. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Funder

National Basic Research Program of China

NSFJS

National Natural Science Foundation of China (NSFC)

China Scholarship Council (CSC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/5/1.4921207.pdf?itemId=/content/aip/journal/adva/5/5/10.1063/1.4921207&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference18 articles.

1. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes

2. Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

3. M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

4. Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

5. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

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1. In Desorption in InGaN Nanowire Growth on Si Generates a Unique Light Emitter: From In-Rich InGaN to the Intermediate Core–Shell InGaN to Pure GaN;Crystal Growth & Design;2023-07-08

2. Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template;Crystal Growth & Design;2023-04-20

3. Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets;Nanomaterials;2022-11-03

4. The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells;Superlattices and Microstructures;2018-05

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